Technical Specifications
Parameters and characteristics for this part
| Specification | STU13005N |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 3 A |
| Current - Collector Cutoff (Max) [Max] | 1 mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | 10 |
| Mounting Type | Through Hole |
| Operating Temperature | 150 °C |
| Package / Case | IPAK, TO-251-3 Short Leads, TO-251AA |
| Power - Max [Max] | 30 W |
| Supplier Device Package | TO-251 (IPAK) |
| Transistor Type | NPN |
| Vce Saturation (Max) @ Ib, Ic | 5 V |
| Voltage - Collector Emitter Breakdown (Max) | 400 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tube | 1 | $ 0.61 | |
| 75 | $ 0.48 | |||
| 150 | $ 0.36 | |||
| 525 | $ 0.28 | |||
| 1050 | $ 0.23 | |||
| 2025 | $ 0.20 | |||
| 5025 | $ 0.19 | |||
| 10050 | $ 0.18 | |||
| 50025 | $ 0.17 | |||
Description
General part information
STU13005N Series
This device is manufactured using high voltage multi epitaxial planar technology for high switching speeds and high voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining a wide RBSOA.
Documents
Technical documentation and resources