FZT853TA

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Diodes Inc

TRANS GP BJT NPN 100V 6A 3000MW 4-PIN(3+TAB) SOT-223 T/R

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Active

Diodes Inc

TRANS GP BJT NPN 100V 6A 3000MW 4-PIN(3+TAB) SOT-223 T/R

Technical Specifications

Parameters and characteristics for this part

Specification	FZT853TA

Current - Collector Cutoff (Max) [Max]	0.01 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	100
Frequency - Transition	130 MHz
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-261AA, TO-261-4
Power - Max [Max]	3 W
Supplier Device Package	SOT-223-3
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	340 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	100 V

Part	Transistor Type	Power - Max [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Voltage - Collector Emitter Breakdown (Max) [Max]	Package / Case	Current - Collector Cutoff (Max) [Max]	Frequency - Transition	Supplier Device Package	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Vce Saturation (Max) @ Ib, Ic
Diodes Inc FZT853TA	NPN	3 W	-55 °C	150 °C	Surface Mount	100 V	TO-261-4 TO-261AA	0.01 µA	130 MHz	SOT-223-3	100	340 mV
Diodes Inc FZT853TC	NPN	3 W	-55 °C	150 °C	Surface Mount	100 V	TO-261-4 TO-261AA	0.01 µA	130 MHz	SOT-223-3	100	340 mV

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

BVCEO>100 V

IC= 6A High Continuous Collector Current

ICM= 10A Peak Pulse Current

Technical documentation and resources