DMT10H032LDVWQ-13
ActiveDiodes Inc
100V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
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DMT10H032LDVWQ-13
ActiveDiodes Inc
100V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | DMT10H032LDVWQ-13 |
|---|---|
| Configuration | 2 N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6.9 A |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 11.9 nC |
| Grade | Automotive |
| Input Capacitance (Ciss) (Max) @ Vds | 683 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 8-PowerVDFN |
| Power - Max [Max] | 1.2 W |
| Qualification | AEC-Q101 |
| Rds On (Max) @ Id, Vgs | 32 mOhm |
| Supplier Device Package | PowerDI3333-8 (SWP) (Type UXD) |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 2.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tape & Reel (TR) | 3000 | $ 0.41 | |
| 6000 | $ 0.38 | |||
| 9000 | $ 0.37 | |||
| 15000 | $ 0.35 | |||
| 21000 | $ 0.35 | |||
Description
General part information
DMT10H032LDVWQ Series
This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP and is ideal for use in: wireless charging, DC-DC converters, and power management.
Documents
Technical documentation and resources