TIP147
ActiveSTMicroelectronics
TRANS DARLINGTON PNP 100V 10A 125000MW 3-PIN(3+TAB) TO-247 TUBE
Deep-Dive with AI
Search across all available documentation for this part.
TIP147
ActiveSTMicroelectronics
TRANS DARLINGTON PNP 100V 10A 125000MW 3-PIN(3+TAB) TO-247 TUBE
Deep-Dive with AI
Technical Specifications
Parameters and characteristics commom to parts in this series
| Specification | TIP147 | TIP147 Series |
|---|---|---|
| - | - | |
| Current - Collector Cutoff (Max) | 2 mA | 2 mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | 1000 | 1000 |
| Mounting Type | Through Hole | Through Hole |
| Operating Temperature | 150 °C | 150 °C |
| Package / Case | TO-247-3 | TO-220-3, TO-247-3 |
| Power - Max | - | 90 W |
| Supplier Device Package | TO-247 | TO-220, TO-247 |
| Transistor Type | PNP - Darlington | PNP - Darlington |
| Vce Saturation (Max) @ Ib, Ic | 3 V | 3 V |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 100 V | 100 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
TIP147 Series
Low voltage PNP power Darlington transistor
| Part | Package / Case | Transistor Type | Voltage - Collector Emitter Breakdown (Max) [Max] | Power - Max [Max] | Current - Collector Cutoff (Max) | DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | Operating Temperature | Vce Saturation (Max) @ Ib, Ic | Supplier Device Package | Mounting Type |
|---|---|---|---|---|---|---|---|---|---|---|
STMicroelectronics TIP147 | ||||||||||
STMicroelectronics TIP147T | ||||||||||
STMicroelectronics TIP147T | TO-220-3 | PNP - Darlington | 100 V | 90 W | 2 mA | 1000 | 150 °C | 3 V | TO-220 | Through Hole |
STMicroelectronics TIP147 | ||||||||||
STMicroelectronics TIP147 | ||||||||||
STMicroelectronics TIP147 | TO-247-3 | PNP - Darlington | 100 V | 2 mA | 1000 | 150 °C | 3 V | TO-247 | Through Hole | |
STMicroelectronics TIP147T |
Description
General part information
TIP147 Series
The devices are manufactured in planar technology with "base island" layout and monolithic Darlington configuration. The resulting transistors show exceptional high gain performance coupled with very low saturation voltage.
Documents
Technical documentation and resources