IPW80R280P7XKSA1

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Infineon Technologies

TRANS MOSFET N-CH 800V 17A 3-PIN(3+TAB) TO-247 TUBE

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Infineon Technologies

TRANS MOSFET N-CH 800V 17A 3-PIN(3+TAB) TO-247 TUBE

Technical Specifications

Parameters and characteristics for this part

Specification	IPW80R280P7XKSA1

Current - Continuous Drain (Id) @ 25°C	17 A
Drain to Source Voltage (Vdss)	800 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	36 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	1200 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power Dissipation (Max) [Max]	101 W
Rds On (Max) @ Id, Vgs	280 mOhm
Supplier Device Package	PG-TO247-3-41
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.5 V

Part	Vgs(th) (Max) @ Id	Power Dissipation (Max) [Max]	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds [Max]	FET Type	Package / Case	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Mounting Type
Infineon Technologies IPW80R280P7XKSA1	3.5 V	101 W	10 V	1200 pF	N-Channel	TO-247-3	36 nC	20 V	280 mOhm	800 V	-55 °C	150 °C	MOSFET (Metal Oxide)	17 A	PG-TO247-3-41	Through Hole

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General part information

N-Channel 800 V 17A (Tc) 101W (Tc) Through Hole PG-TO247-3-41

Technical documentation and resources