IRLR120NTRLPBF

Infineon Technologies

IR MOSFET™ N-CHANNEL POWER MOSFET ; DPAK TO-252 PACKAGE; 185 MOHM;

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IRLR120NTRLPBF

Infineon Technologies

IR MOSFET™ N-CHANNEL POWER MOSFET ; DPAK TO-252 PACKAGE; 185 MOHM;

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Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IRLR120NTRLPBF

Current - Continuous Drain (Id) @ 25°C	10 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	4 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	20 nC
Input Capacitance (Ciss) (Max) @ Vds	440 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)	48 W
Rds On (Max) @ Id, Vgs	185 mOhm
Supplier Device Package	TO-252AA (DPAK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	16 V
Vgs(th) (Max) @ Id	2 V

IRLR120 Series

Part	Package / Case	Rds On (Max) @ Id, Vgs	Mounting Type	FET Type	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Technology
Infineon Technologies IRLR120NTRLPBF	DPAK (2 Leads + Tab) SC-63 TO-252-3	185 mOhm	Surface Mount	N-Channel	2 V	440 pF	100 V	-55 °C	175 ░C	TO-252AA (DPAK)	48 W	20 nC	4 V	10 V	10 A	16 V	MOSFET (Metal Oxide)

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 1.64
		10	$ 1.04
		100	$ 0.69
		500	$ 0.55
		1000	$ 0.50
	Digi-Reel®	1	$ 1.64
		10	$ 1.04
		100	$ 0.69
		500	$ 0.55
		1000	$ 0.50
	Tape & Reel (TR)	3000	$ 0.44
		6000	$ 0.41

Description

General part information

IRLR120 Series

The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.

Documents

Technical documentation and resources