RN2111ACT(TPL3)

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Toshiba Semiconductor and Storage

TRANS PREBIAS PNP 50V 0.08A CST3

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Toshiba Semiconductor and Storage

TRANS PREBIAS PNP 50V 0.08A CST3

Technical Specifications

Parameters and characteristics for this part

Specification	RN2111ACT(TPL3)

Current - Collector (Ic) (Max) [Max]	80 mA
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	120
Mounting Type	Surface Mount
Package / Case	SOT-883, SC-101
Power - Max [Max]	100 mW
Resistor - Base (R1)	10 kOhms
Supplier Device Package	CST3
Transistor Type	PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic	150 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	50 V

Part	Power - Max [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Resistor - Base (R1)	Transistor Type	Current - Collector Cutoff (Max) [Max]	Mounting Type	Package / Case	Supplier Device Package	Current - Collector (Ic) (Max) [Max]	Vce Saturation (Max) @ Ib, Ic	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]
Toshiba Semiconductor and Storage RN2111ACT(TPL3)	100 mW	50 V	10 kOhms	PNP - Pre-Biased	100 nA	Surface Mount	SC-101 SOT-883	CST3	80 mA	150 mV	120

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General part information

Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 80 mA 100 mW Surface Mount CST3

Technical documentation and resources

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