STD4N62K3
ActivePOWER MOSFET, N CHANNEL, 3.8 A, 620 V, 1.7 OHM, 10 V, 3.75 V ROHS COMPLIANT: YES
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STD4N62K3
ActivePOWER MOSFET, N CHANNEL, 3.8 A, 620 V, 1.7 OHM, 10 V, 3.75 V ROHS COMPLIANT: YES
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Technical Specifications
Parameters and characteristics for this part
| Specification | STD4N62K3 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 3.8 A |
| Drain to Source Voltage (Vdss) | 620 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 14 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 450 pF |
| Mounting Type | Surface Mount |
| Operating Temperature | 150 °C |
| Package / Case | SC-63, DPAK (2 Leads + Tab), TO-252-3 |
| Power Dissipation (Max) | 70 W |
| Rds On (Max) @ Id, Vgs | 1.95 Ohm |
| Supplier Device Package | DPAK |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 30 V |
| Vgs(th) (Max) @ Id | 4.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
STD4N62K3 Series
This MDmesh K3 Power MOSFET is the result of improvements applied to STMicroelectronics’ MDmesh technology, combined with a new optimized vertical structure. This device boasts an extremely low on-resistance, superior dynamic performance and high avalanche capability, rendering it suitable for the most demanding applications.
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Technical documentation and resources