BC850BW RFG

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Taiwan Semiconductor Corporation

45V 200MW 200@2MA,5V 100MA NPN SOT-323 BIPOLAR (BJT) ROHS

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Taiwan Semiconductor Corporation

45V 200MW 200@2MA,5V 100MA NPN SOT-323 BIPOLAR (BJT) ROHS

Technical Specifications

Parameters and characteristics for this part

Specification	BC850BW RFG

Current - Collector (Ic) (Max) [Max]	100 mA
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	200
Frequency - Transition	100 MHz
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SC-70, SOT-323
Power - Max [Max]	200 mW
Supplier Device Package	SOT-323
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	600 mV
Voltage - Collector Emitter Breakdown (Max)	45 V

Part	Supplier Device Package	Voltage - Collector Emitter Breakdown (Max)	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Power - Max [Max]	Mounting Type	Current - Collector Cutoff (Max) [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Current - Collector (Ic) (Max) [Max]	Package / Case	Frequency - Transition	Vce Saturation (Max) @ Ib, Ic	Transistor Type
Taiwan Semiconductor Corporation BC850CW RFG	SOT-323	45 V	420	200 mW	Surface Mount	100 nA	-55 °C	150 °C	100 mA	SC-70 SOT-323	100 MHz	600 mV	NPN
Taiwan Semiconductor Corporation BC850BW RFG	SOT-323	45 V	200	200 mW	Surface Mount	100 nA	-55 °C	150 °C	100 mA	SC-70 SOT-323	100 MHz	600 mV	NPN

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Bipolar (BJT) Transistor NPN 45 V 100 mA 100MHz 200 mW Surface Mount SOT-323

Technical documentation and resources