IPD180N10N3GATMA1

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Infineon Technologies

OPTIMOS™ 3 N-CHANNEL POWER MOSFET 100 V ; DPAK TO-252 PACKAGE; 18 MOHM;

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IPD180N10N3GATMA1

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Infineon Technologies

OPTIMOS™ 3 N-CHANNEL POWER MOSFET 100 V ; DPAK TO-252 PACKAGE; 18 MOHM;

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Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IPD180N10N3GATMA1

Current - Continuous Drain (Id) @ 25°C	43 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	6 V, 10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	25 nC
Input Capacitance (Ciss) (Max) @ Vds	1800 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)	71 W
Rds On (Max) @ Id, Vgs [Max]	18 mOhm
Supplier Device Package	PG-TO252-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.5 V

IPD180 Series

Part	Rds On (Max) @ Id, Vgs [Max]	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds	Technology	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	FET Type	Package / Case
Infineon Technologies IPD180N10N3GATMA1	18 mOhm	3.5 V	43 A	20 V	25 nC	Surface Mount	-55 °C	175 ░C	1800 pF	MOSFET (Metal Oxide)	6 V 10 V	PG-TO252-3	71 W	100 V	N-Channel	DPAK (2 Leads + Tab) SC-63 TO-252-3

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 1.75
		10	$ 1.11
		100	$ 0.75
		500	$ 0.59
		1000	$ 0.54
	Digi-Reel®	1	$ 1.75
		10	$ 1.11
		100	$ 0.75
		500	$ 0.59
		1000	$ 0.54
	Tape & Reel (TR)	2500	$ 0.49
		5000	$ 0.45
		7500	$ 0.45

Description

General part information

IPD180 Series

Infineon's 100 V OptiMOS™ power MOSFETs offer superior solutions for high efficiency, high power-density SMPS. Compared to the next best technology this family achieves a reduction of 30% in both RDS(on)and FOM (figure of merit).

Documents

Technical documentation and resources