BYR29-800,127

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WeEn Semiconductors Co., Ltd

DIODE GEN PURP 800V 8A TO220AC

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WeEn Semiconductors Co., Ltd

DIODE GEN PURP 800V 8A TO220AC

Technical Specifications

Parameters and characteristics for this part

Specification	BYR29-800,127

Current - Average Rectified (Io)	8 A
Current - Reverse Leakage @ Vr	10 µA
Mounting Type	Through Hole
Operating Temperature - Junction	150 °C
Package / Case	TO-220-2
Reverse Recovery Time (trr)	75 ns
Speed	200 mA, 500 ns
Supplier Device Package	TO-220AC
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	800 V
Voltage - Forward (Vf) (Max) @ If	1.5 V, 8 A

Part	Technology	Voltage - Forward (Vf) (Max) @ If	Current - Average Rectified (Io)	Current - Reverse Leakage @ Vr	Package / Case	Operating Temperature - Junction	Speed	Voltage - DC Reverse (Vr) (Max) [Max]	Reverse Recovery Time (trr)	Supplier Device Package	Mounting Type
WeEn Semiconductors Co., Ltd BYR29-800,127	Standard	1.5 V 8 A	8 A	10 µA	TO-220-2	150 °C	200 mA 500 ns	800 V	75 ns	TO-220AC	Through Hole
WeEn Semiconductors Co., Ltd BYR29X-800,127	Standard	1.7 V	8 A	10 µA	TO-220-2 Full Pack Isolated Tab	150 °C	200 mA 500 ns	800 V	75 ns	TO-220FP	Through Hole
WeEn Semiconductors Co., Ltd BYR29X-600,127	Standard	1.7 V	8 A	10 µA	TO-220-2 Full Pack Isolated Tab	150 °C	200 mA 500 ns	600 V	75 ns	TO-220FP	Through Hole

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 800 V 8A Through Hole TO-220AC

Technical documentation and resources

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