TQM032NH04LCR RLG

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Taiwan Semiconductor Corporation

40V, 81A, SINGLE N-CHANNEL POWER

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Taiwan Semiconductor Corporation

40V, 81A, SINGLE N-CHANNEL POWER

Technical Specifications

Parameters and characteristics for this part

Specification	TQM032NH04LCR RLG

Current - Continuous Drain (Id) @ 25°C	81 A, 23 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	75 nC
Grade	Automotive
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerTDFN
Power Dissipation (Max)	115 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	3.2 mOhm
Supplier Device Package	8-PDFN (5x6)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	16 V
Vgs(th) (Max) @ Id [Max]	2.2 V

Part	Power Dissipation (Max)	Supplier Device Package	Vgs(th) (Max) @ Id [Max]	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Technology	Grade	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Package / Case	Drain to Source Voltage (Vdss)	Qualification	FET Type
Taiwan Semiconductor Corporation TQM032NH04LCR RLG	115 W	8-PDFN (5x6)	2.2 V	16 V	75 nC	MOSFET (Metal Oxide)	Automotive	-55 °C	175 ░C	4.5 V 10 V	Surface Mount	23 A 81 A	3.2 mOhm	8-PowerTDFN	40 V	AEC-Q101	N-Channel

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General part information

N-Channel 40 V 23A (Ta), 81A (Tc) 115W (Tc) Surface Mount 8-PDFN (5x6)

Technical documentation and resources