TSD3G

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Taiwan Semiconductor Corporation

DIODE GEN PURP 400V 3A DO214AB

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Taiwan Semiconductor Corporation

DIODE GEN PURP 400V 3A DO214AB

Technical Specifications

Parameters and characteristics for this part

Specification	TSD3G

Capacitance @ Vr, F	45 pF
Current - Average Rectified (Io)	3 A
Current - Reverse Leakage @ Vr	1 µA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 C
Package / Case	SMC, DO-214AB
Speed	Standard Recovery >500ns
Speed	200 mA
Supplier Device Package	DO-214AB (SMC)
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	400 V

Part	Supplier Device Package	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Mounting Type	Speed	Speed	Capacitance @ Vr, F	Technology	Voltage - DC Reverse (Vr) (Max) [Max]	Current - Average Rectified (Io)	Package / Case	Current - Reverse Leakage @ Vr
Taiwan Semiconductor Corporation TSD3G	DO-214AB (SMC)	175 ░C	-55 C	Surface Mount	Standard Recovery >500ns	200 mA	45 pF	Standard	400 V	3 A	DO-214AB SMC	1 µA

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General part information

Diode 400 V 3A Surface Mount DO-214AB (SMC)

Technical documentation and resources