STWA70N65DM6

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STMicroelectronics

POWER MOSFET N-CHANNEL 650V 68A 36MILLIOHM 3-PIN TO-247 THROUGH HOLE TUBE

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STMicroelectronics

POWER MOSFET N-CHANNEL 650V 68A 36MILLIOHM 3-PIN TO-247 THROUGH HOLE TUBE

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General part information

N-Channel 650 V 68A (Tc) 450W (Tc) Through Hole TO-247 Long Leads

Technical documentation and resources

Specification	STWA70N65DM6	STWA70 Series

Current - Continuous Drain (Id) @ 25°C	68 A	66 - 68 A
Drain to Source Voltage (Vdss)	650 V	600 - 650 V
Drive Voltage (Max Rds On, Min Rds On)	10 V	10 V
FET Type	N-Channel	N-Channel
Gate Charge (Qg) (Max) @ Vgs	125 nC	125 nC
Gate Charge (Qg) (Max) @ Vgs	-	120 nC
Input Capacitance (Ciss) (Max) @ Vds	4900 pF	4900 - 5508 pF
Mounting Type	Through Hole	Through Hole
Operating Temperature [Max]	150 °C	150 °C
Operating Temperature [Min]	-55 °C	-55 °C
Package / Case	TO-247-3	TO-247-3
Power Dissipation (Max)	450 W	446 - 450 W
Rds On (Max) @ Id, Vgs	40 mOhm	40 - 42 mOhm
Supplier Device Package	TO-247 Long Leads	TO-247 Long Leads
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)
Vgs (Max)	25 V	25 V
Vgs(th) (Max) @ Id	4.75 V	4.75 - 5 V

Part	FET Type	Gate Charge (Qg) (Max) @ Vgs	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	Vgs(th) (Max) @ Id	Package / Case	Rds On (Max) @ Id, Vgs	Technology	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs [Max]
STMicroelectronics STWA70N65DM6	N-Channel	125 nC	TO-247 Long Leads	4900 pF	Through Hole	68 A	450 W	4.75 V	TO-247-3	40 mOhm	MOSFET (Metal Oxide)	650 V	-55 °C	150 °C	25 V	10 V
STMicroelectronics STWA70N60DM2	N-Channel		TO-247 Long Leads	5508 pF	Through Hole	66 A	446 W	5 V	TO-247-3	42 mOhm	MOSFET (Metal Oxide)	600 V	-55 °C	150 °C	25 V	10 V	120 nC