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DMN3401LDW-13 - SOT 363

DMN3401LDW-13

Active
Diodes Inc

30V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

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DMN3401LDW-13 - SOT 363

DMN3401LDW-13

Active
Diodes Inc

30V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationDMN3401LDW-13
Configuration2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C800 mA
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs [Max]1.2 nC
Input Capacitance (Ciss) (Max) @ Vds50 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case6-TSSOP, SC-88, SOT-363
Power - Max [Max]290 mW
Rds On (Max) @ Id, Vgs400 mOhm
Supplier Device PackageSOT-363
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id1.6 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.36
10$ 0.22
100$ 0.14
500$ 0.10
1000$ 0.09
2000$ 0.08
5000$ 0.07
Digi-Reel® 1$ 0.36
10$ 0.22
100$ 0.14
500$ 0.10
1000$ 0.09
2000$ 0.08
5000$ 0.07
Tape & Reel (TR) 10000$ 0.06
30000$ 0.06
50000$ 0.05

Description

General part information

DMN3401LDW Series

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.