Technical Specifications
Parameters and characteristics for this part
| Specification | STF9N60M2 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 5.5 A |
| Drain to Source Voltage (Vdss) | 600 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 10 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 320 pF |
| Mounting Type | Through Hole |
| Operating Temperature | 150 °C |
| Package / Case | TO-220-3 Full Pack |
| Power Dissipation (Max) | 20 W |
| Rds On (Max) @ Id, Vgs | 780 mOhm |
| Supplier Device Package | TO-220FP |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 25 V |
| Vgs(th) (Max) @ Id | 4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
STF9N60M2 Series
These devices are N-channel Power MOSFETs developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg. These revolutionary Power MOSFETs associate a vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charge. They are therefore suitable for the most demanding high efficiency converters.
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Documents
Technical documentation and resources
Datasheet
DatasheetDS9709
Product SpecificationsAN4250
Application Notes (5 of 9)AN2842
Application Notes (5 of 9)AN4829
Application Notes (5 of 9)Flyers (5 of 10)
Flyers (5 of 10)
TN1225
Technical Notes & ArticlesFlyers (5 of 10)
AN4742
Application Notes (5 of 9)Flyers (5 of 10)
AN4337
Application Notes (5 of 9)TN1224
Technical Notes & ArticlesFlyers (5 of 10)
Flyers (5 of 10)
UM1575
User ManualsFlyers (5 of 10)
AN2344
Application Notes (5 of 9)TN1156
Technical Notes & ArticlesTN1378
Technical Notes & ArticlesFlyers (5 of 10)
AN4720
Application Notes (5 of 9)Flyers (5 of 10)
AN4406
Application Notes (5 of 9)AN5318
Application Notes (5 of 9)Flyers (5 of 10)
