
HBDM60V600W-7
ObsoleteDiodes Inc
TRANS GP BJT NPN/PNP 65V/60V 0.5A/0.6A 6-PIN SOT-363 T/R
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HBDM60V600W-7
ObsoleteDiodes Inc
TRANS GP BJT NPN/PNP 65V/60V 0.5A/0.6A 6-PIN SOT-363 T/R
Deep-Dive with AI
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Technical Specifications
Parameters and characteristics for this part
| Specification | HBDM60V600W-7 |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 500 mA, 600 mA |
| Current - Collector Cutoff (Max) [Max] | 100 nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100, 100 |
| Frequency - Transition | 100 MHz |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Power - Max [Max] | 200 mW |
| Supplier Device Package | SOT-363 |
| Transistor Type | 1 NPN, 1 PNP |
| Vce Saturation (Max) @ Ib, Ic | 400 mV |
| Vce Saturation (Max) @ Ib, Ic | 500 mV |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 65 V |
| Voltage - Collector Emitter Breakdown (Max) [Min] | 60 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
Description
General part information
HBDM60V600 Series
Bipolar (BJT) Transistor Array 1 NPN, 1 PNP 65V, 60V 500mA, 600mA 100MHz 200mW Surface Mount SOT-363
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Technical documentation and resources