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HBDM60V600W-7 - SOT 363

HBDM60V600W-7

Obsolete
Diodes Inc

TRANS GP BJT NPN/PNP 65V/60V 0.5A/0.6A 6-PIN SOT-363 T/R

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HBDM60V600W-7 - SOT 363

HBDM60V600W-7

Obsolete
Diodes Inc

TRANS GP BJT NPN/PNP 65V/60V 0.5A/0.6A 6-PIN SOT-363 T/R

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationHBDM60V600W-7
Current - Collector (Ic) (Max) [Max]500 mA, 600 mA
Current - Collector Cutoff (Max) [Max]100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce100, 100
Frequency - Transition100 MHz
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case6-TSSOP, SC-88, SOT-363
Power - Max [Max]200 mW
Supplier Device PackageSOT-363
Transistor Type1 NPN, 1 PNP
Vce Saturation (Max) @ Ib, Ic400 mV
Vce Saturation (Max) @ Ib, Ic500 mV
Voltage - Collector Emitter Breakdown (Max) [Max]65 V
Voltage - Collector Emitter Breakdown (Max) [Min]60 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

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Description

General part information

HBDM60V600 Series

Bipolar (BJT) Transistor Array 1 NPN, 1 PNP 65V, 60V 500mA, 600mA 100MHz 200mW Surface Mount SOT-363

Documents

Technical documentation and resources