IPT017N10NF2SATMA1

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Infineon Technologies

STRONGIRFET™ 2 SINGLE N-CHANNEL POWER MOSFET 100 V IN TOLL PACKAGE

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DocumentsTechnical Data Sheet EN Datasheet

IPT017N10NF2SATMA1

Active

Infineon Technologies

STRONGIRFET™ 2 SINGLE N-CHANNEL POWER MOSFET 100 V IN TOLL PACKAGE

Deep-Dive with AI

DocumentsTechnical Data Sheet EN Datasheet

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IPT017N10NF2SATMA1

Current - Continuous Drain (Id) @ 25°C	294 A, 33 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	6 V, 10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	195 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	9300 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerSFN
Power Dissipation (Max)	300 W, 3.8 W
Rds On (Max) @ Id, Vgs	1.75 mOhm
Supplier Device Package	PG-HSOF-8-10
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.8 V

IPT017 Series

Part	Technology	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Package / Case	Mounting Type	Vgs (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Drain to Source Voltage (Vdss)	FET Type	Current - Continuous Drain (Id) @ 25°C
Infineon Technologies IPT017N10NF2SATMA1	MOSFET (Metal Oxide)	3.8 W 300 W	195 nC	9300 pF	6 V 10 V	3.8 V	8-PowerSFN	Surface Mount	20 V	1.75 mOhm	-55 °C	175 ░C	PG-HSOF-8-10	100 V	N-Channel	33 A 294 A

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 5.12
		10	$ 3.41
		100	$ 2.44
		500	$ 2.02
	Digi-Reel®	1	$ 5.12
		10	$ 3.41
		100	$ 2.44
		500	$ 2.02
	Tape & Reel (TR)	1800	$ 1.95
Newark	Each (Supplied on Cut Tape)	1	$ 4.65
		10	$ 3.51
		25	$ 3.26
		50	$ 3.00
		100	$ 2.75
		250	$ 2.58
		500	$ 2.41
		1000	$ 2.29

Description

General part information

IPT017 Series

Infineon'sStrongIRFET™ 2power MOSFET 100 V features low RDS(on)of 1.7 mOhm, addressing a broad range of applications from low- to high-switching frequency.

Documents

Technical documentation and resources

Technical Data Sheet EN

Datasheet