FD800R17KE3B2NOSA1

NRND

Infineon Technologies

THE FD800R17KE3_B2 IS A CHOPPER IGBT3 - E3 MODULE IN A IHM HOUSING FOR INDUSTRIAL&TRACTION APPLICATIONS UP TO 1700 V AND 800 A.

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NRND

Infineon Technologies

THE FD800R17KE3_B2 IS A CHOPPER IGBT3 - E3 MODULE IN A IHM HOUSING FOR INDUSTRIAL&TRACTION APPLICATIONS UP TO 1700 V AND 800 A.

Technical Specifications

Parameters and characteristics for this part

Specification	FD800R17KE3B2NOSA1

Configuration	Single Chopper
Current - Collector (Ic) (Max) [Max]	1200 A
Current - Collector Cutoff (Max) [Max]	5 mA
Input	Standard
Input Capacitance (Cies) @ Vce	72 nF
Mounting Type	Chassis Mount
NTC Thermistor	False
Operating Temperature [Max]	125 ¯C
Operating Temperature [Min]	-40 °C
Package / Case	Module
Power - Max [Max]	5200 W
Supplier Device Package	Module
Vce(on) (Max) @ Vge, Ic	2.45 V
Voltage - Collector Emitter Breakdown (Max)	1700 V

Part	Configuration	Input Capacitance (Cies) @ Vce	Input	Mounting Type	Current - Collector (Ic) (Max) [Max]	Vce(on) (Max) @ Vge, Ic	Supplier Device Package	NTC Thermistor	Current - Collector Cutoff (Max) [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Power - Max [Max]	Voltage - Collector Emitter Breakdown (Max)
Infineon Technologies FD800R17KE3B2NOSA1	Single Chopper	72 nF	Standard	Chassis Mount	1200 A	2.45 V	Module		5 mA	-40 °C	125 ¯C	Module	5200 W	1700 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tray	2	$ 1108.81

General part information

1700VIHM130mm chopperIGBT Modulewith IGBT3, enlarged diode and AlSiC base-plate - The best solution for your traction and industry applications