AUIRL7766M2TR

Obsolete

Infineon Technologies

MOSFET N-CH 100V 10A DIRECTFET

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Obsolete

Infineon Technologies

MOSFET N-CH 100V 10A DIRECTFET

Technical Specifications

Parameters and characteristics for this part

Specification	AUIRL7766M2TR

Current - Continuous Drain (Id) @ 25°C	10 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	66 nC
Input Capacitance (Ciss) (Max) @ Vds	5305 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	DirectFET™ Isometric M4
Rds On (Max) @ Id, Vgs	10 mOhm
Supplier Device Package	DirectFET™ Isometric M4
Technology	MOSFET (Metal Oxide)
Vgs (Max)	16 V
Vgs(th) (Max) @ Id	2.5 V

Part	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds	Technology	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Supplier Device Package	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Package / Case	Drain to Source Voltage (Vdss)
Infineon Technologies AUIRL7766M2TR	Surface Mount	66 nC	5305 pF	MOSFET (Metal Oxide)	2.5 V	-55 °C	175 ░C	10 A	16 V	DirectFET™ Isometric M4	N-Channel	4.5 V 10 V	10 mOhm	DirectFET™ Isometric M4	100 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 100 V 10A (Ta) 2.5W (Ta), 62.5W (Tc) Surface Mount DirectFET™ Isometric M4

Technical documentation and resources