RN1901FETE85LF

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Toshiba Semiconductor and Storage

TRANS 2NPN PREBIAS 0.1W ES6

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Toshiba Semiconductor and Storage

TRANS 2NPN PREBIAS 0.1W ES6

Technical Specifications

Parameters and characteristics for this part

Specification	RN1901FETE85LF

Current - Collector (Ic) (Max) [Max]	100 mA
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	30
Frequency - Transition	250 MHz
Mounting Type	Surface Mount
Package / Case	SOT-666, SOT-563
Power - Max [Max]	100 mW
Resistor - Base (R1)	4.7 kOhms
Resistor - Emitter Base (R2)	4700 Ohms
Supplier Device Package	ES6
Transistor Type	2 NPN - Pre-Biased (Dual)
Vce Saturation (Max) @ Ib, Ic	300 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	50 V

Part	Transistor Type	Qualification	Vce Saturation (Max) @ Ib, Ic	Voltage - Collector Emitter Breakdown (Max) [Max]	Mounting Type	Supplier Device Package	Current - Collector Cutoff (Max) [Max]	Current - Collector (Ic) (Max) [Max]	Resistor - Base (R1)	Package / Case	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Grade	Resistor - Emitter Base (R2)	Frequency - Transition	Power - Max [Max]
Toshiba Semiconductor and Storage RN1901,LXHF(CT	2 NPN - Pre-Biased (Dual)	AEC-Q101	300 mV	50 V	Surface Mount	US6	500 nA	100 mA	4.7 kOhms	6-TSSOP SC-88 SOT-363	30	Automotive	4700 Ohms	250 MHz	200 mW
Toshiba Semiconductor and Storage RN1901FETE85LF	2 NPN - Pre-Biased (Dual)		300 mV	50 V	Surface Mount	ES6	100 nA	100 mA	4.7 kOhms	SOT-563 SOT-666	30		4700 Ohms	250 MHz	100 mW

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General part information

Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 100mW Surface Mount ES6

Technical documentation and resources