IPU13N03LA G

Obsolete

Infineon Technologies

MOSFET N-CH 25V 30A TO251-3

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Obsolete

Infineon Technologies

MOSFET N-CH 25V 30A TO251-3

Technical Specifications

Parameters and characteristics for this part

Specification	IPU13N03LA G

Current - Continuous Drain (Id) @ 25°C	30 A
Drain to Source Voltage (Vdss)	25 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	8.3 nC
Input Capacitance (Ciss) (Max) @ Vds	1043 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	IPAK, TO-251-3 Short Leads, TO-251AA
Power Dissipation (Max)	46 W
Rds On (Max) @ Id, Vgs	12.8 mOhm
Supplier Device Package	P-TO251-3-1
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2 V

Part	Technology	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	FET Type	Package / Case	Mounting Type	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Rds On (Max) @ Id, Vgs
Infineon Technologies IPU13N03LA G	MOSFET (Metal Oxide)	2 V	-55 °C	175 ░C	N-Channel	IPAK TO-251-3 Short Leads TO-251AA	Through Hole	46 W	1043 pF	8.3 nC	25 V	4.5 V 10 V	20 V	30 A	P-TO251-3-1	12.8 mOhm

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 25 V 30A (Tc) 46W (Tc) Through Hole P-TO251-3-1

Technical documentation and resources