JANTX2N3467

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Microchip Technology

PNP SILICON SWITCHING -40V TO -50V, -1A

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JANTX2N3467

Active

Microchip Technology

PNP SILICON SWITCHING -40V TO -50V, -1A

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Description Specifications Series Pricing CAD Documents

Description

General part information

JANTX2N3467-Transistor Series

This specification covers the performance requirements for PNP silicon switching 2N3467 and 2N3468 transistors. Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for the device type as specified in MIL-PRF-19500/348.

Technical Specifications

Parameters and characteristics for this part

Specification	JANTX2N3467

Current - Collector (Ic) (Max)	1 A
Current - Collector Cutoff (Max)	100 nA
DC Current Gain (hFE) (Min)	40
Grade	Military
Mounting Type	Through Hole
Operating Temperature (Max)	175 °C
Operating Temperature (Min)	-55 °C
Package / Case	TO-39-3 Metal Can, TO-205AD
Package Name	TO-39
Power - Max	1 VA
Qualification	MIL-PRF-19500, 348
Transistor Type	PNP
Vce Saturation (Max)	1.2 V
Voltage - Collector Emitter Breakdown (Max)	40 V

JANTX2N3467-Transistor Series

PNP Silicon Switching -40V to -50V, -1A

Part	Current - Collector (Ic) (Max)	Operating Temperature (Min)	Operating Temperature (Max)	DC Current Gain (hFE) (Min)	Grade	Package Name	Qualification	Package / Case	Transistor Type	Current - Collector Cutoff (Max)	Vce Saturation (Max)	Mounting Type	Power - Max	Voltage - Collector Emitter Breakdown (Max)
Microchip Technology JANTX2N3467	1 A	-55 °C	175 °C	40	Military	TO-39	348 MIL-PRF-19500	TO-205AD TO-39-3 Metal Can	PNP	100 nA	1.2 V	Through Hole	1 VA	40 V

Pricing

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CAD

3D models and CAD resources for this part

Documents

Technical documentation and resources

JANTX2N3467 | Datasheet