IXFK32N80Q3

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IXYS

MOSFET N-CH 800V 32A TO264AA

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IXYS

MOSFET N-CH 800V 32A TO264AA

Technical Specifications

Parameters and characteristics for this part

Specification	IXFK32N80Q3

Current - Continuous Drain (Id) @ 25°C	32 A
Drain to Source Voltage (Vdss)	800 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	140 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	6940 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-264AA, TO-264-3
Power Dissipation (Max) [Max]	1000 W
Rds On (Max) @ Id, Vgs	270 mOhm
Supplier Device Package	TO-264AA (IXFK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	6.5 V

Part	Gate Charge (Qg) (Max) @ Vgs [Max]	Supplier Device Package	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Technology	Input Capacitance (Ciss) (Max) @ Vds [Max]	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Package / Case	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	Mounting Type	Power Dissipation (Max) [Max]	FET Type
IXYS IXFK32N80Q3	140 nC	TO-264AA (IXFK)	800 V	10 V	MOSFET (Metal Oxide)	6940 pF	270 mOhm	6.5 V	TO-264-3 TO-264AA	32 A	-55 °C	150 °C	30 V	Through Hole	1000 W	N-Channel

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General part information

N-Channel 800 V 32A (Tc) 1000W (Tc) Through Hole TO-264AA (IXFK)

Technical documentation and resources

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