FMMT555TC

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Diodes Inc

SMALL SIGNAL BIPOLAR TRANSISTOR, 1A I(C), 150V V(BR)CEO, 1-ELEMENT, PNP, SILICON,

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Active

Diodes Inc

SMALL SIGNAL BIPOLAR TRANSISTOR, 1A I(C), 150V V(BR)CEO, 1-ELEMENT, PNP, SILICON,

Technical Specifications

Parameters and characteristics for this part

Specification	FMMT555TC

Current - Collector (Ic) (Max) [Max]	1 A
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	50 hFE
Frequency - Transition	100 MHz
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Power - Max [Max]	500 mW
Supplier Device Package	SOT-23-3
Transistor Type	PNP
Voltage - Collector Emitter Breakdown (Max)	150 V

PNP, 150V, 1A, SOT23

Part	Current - Collector (Ic) (Max) [Max]	Supplier Device Package	Package / Case	Mounting Type	Transistor Type	Frequency - Transition	Voltage - Collector Emitter Breakdown (Max)	Current - Collector Cutoff (Max) [Max]	Power - Max [Max]	Operating Temperature [Min]	Operating Temperature [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]
Diodes Inc FMMT555TC	1 A	SOT-23-3	SC-59 SOT-23-3 TO-236-3	Surface Mount	PNP	100 MHz	150 V	100 nA	500 mW	-55 °C	150 °C	50 hFE
Diodes Inc FMMT555TA	1 A	SOT-23-3	SC-59 SOT-23-3 TO-236-3	Surface Mount	PNP	100 MHz	150 V	100 nA	500 mW	-55 °C	150 °C	50 hFE

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

PNP, 150V, 1A, SOT23

Technical documentation and resources