Littelfuse Power Semi TO-247 3 H 2Sq 1W2N 3L image

IXTH48N65X2

Active

LITTELFUSE

TRANS MOSFET N-CH 650V 48A 3-PIN(3+TAB) TO-247

Find alt

Alpha

IXTH48N65X2

Active

LITTELFUSE

TRANS MOSFET N-CH 650V 48A 3-PIN(3+TAB) TO-247

Find alt

Alpha

Description Specifications Series Pricing CAD Documents

Description

General part information

IXTH48 Series

Developed using the charge compensation principle and proprietary process technology, these new devices exhibit the lowest on-state resistances, along with low gate charges and superior dv/dt performance. Their avalanche capability also enhances the device ruggedness. In addition, thanks to the fast soft-recovery body diode, the Ultra-Junction MOSFETs help reduce switching losses and electromagnetic interference (EMI). Advantages: Higher efficiency High power density Easy to mount Space savings

Technical Specifications

Parameters and characteristics for this part

Specification	IXTH48N65X2

Current - Continuous Drain (Id) (Tc)	48 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	77 nC
Input Capacitance (Ciss) (Max)	4420 pF
Mounting Type	Through Hole
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	TO-247-3
Package Name	TO-247 (IXTH)
Power Dissipation (Max)	660 W
Rds On (Max)	68 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max)	4.5 V

IXTH48 Series

DiscMSFT NChUltraJnctn X2Class TO-247AD

Part	Operating Temperature (Min)	Operating Temperature (Max)	Vgs (Max)	Input Capacitance (Ciss) (Max)	Mounting Type	Current - Continuous Drain (Id) (Tc)	Gate Charge (Max)	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Package / Case	Technology	Package Name	Drain to Source Voltage (Vdss)	Vgs(th) (Max)	Rds On (Max)
LITTELFUSE IXTH48N20	-55 °C	150 °C	20 V	3000 pF	Through Hole	48 A	110 nC	275 W	10 V	N-Channel	TO-247-3	MOSFET (Metal Oxide)	TO-247 (IXTH)	200 V	4 V
LITTELFUSE IXTH48N65X2	-55 °C	150 °C	30 V	4420 pF	Through Hole	48 A	77 nC	660 W	10 V	N-Channel	TO-247-3	MOSFET (Metal Oxide)	TO-247 (IXTH)	650 V	4.5 V	68 mOhm
LITTELFUSE IXTH48P20P	-55 °C	150 °C	20 V	5400 pF	Through Hole	48 A	103 nC	462 W	10 V	P-Channel	TO-247-3	MOSFET (Metal Oxide)	TO-247 (IXTH)	200 V	4.5 V	85 mOhm
LITTELFUSE IXTH48N15	-55 °C	150 °C	20 V	3200 pF	Through Hole	48 A	140 nC	180 W	10 V	N-Channel	TO-247-3	MOSFET (Metal Oxide)	TO-247 (IXTH)	150 V		32 mOhm
LITTELFUSE IXTH48N65X2	-55 °C	150 °C	30 V	4420 pF	Through Hole	48 A	77 nC	660 W	10 V	N-Channel	TO-247-3	MOSFET (Metal Oxide)	TO-247 (IXTH)	650 V	4.5 V	68 mOhm
LITTELFUSE IXTH48P20P	-55 °C	150 °C	20 V	5400 pF	Through Hole	48 A	103 nC	462 W	10 V	P-Channel	TO-247-3	MOSFET (Metal Oxide)	TO-247 (IXTH)	200 V	4.5 V	85 mOhm

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Create a free account to access distributor pricing data.

CAD

3D models and CAD resources for this part

Documents

Technical documentation and resources

Forward-Biased, Reverse-Biased, and Short-Circuit Safe Operating Area of MOSFETs and IGBTs

Datasheet

IXTH48N65X2 | Datasheet