IGW50N65H5AXKSA1

NRND

Infineon Technologies

IGBT TRENCH 650V 80A TO247-3

Search across all available documentation for this part.

NRND

Infineon Technologies

IGBT TRENCH 650V 80A TO247-3

Technical Specifications

Parameters and characteristics for this part

Specification	IGW50N65H5AXKSA1

Current - Collector (Ic) (Max) [Max]	80 A
Current - Collector Pulsed (Icm)	150 A
Gate Charge	116 nC
Grade	Automotive
IGBT Type	Trench
Mounting Type	Through Hole
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-40 C
Package / Case	TO-247-3
Power - Max [Max]	270 W
Qualification	AEC-Q101
Supplier Device Package	PG-TO247-3
Switching Energy	450 µJ, 160 µJ
Td (on/off) @ 25°C	173 ns, 21 ns
Test Condition	12 Ohm, 400 V, 15 V, 25 A
Vce(on) (Max) @ Vge, Ic	2.1 V
Voltage - Collector Emitter Breakdown (Max)	650 V

Part	Package / Case	Switching Energy	Current - Collector (Ic) (Max) [Max]	Qualification	Voltage - Collector Emitter Breakdown (Max)	Test Condition	Vce(on) (Max) @ Vge, Ic	Mounting Type	Current - Collector Pulsed (Icm)	Gate Charge	Operating Temperature [Min]	Operating Temperature [Max]	Grade	Supplier Device Package	Td (on/off) @ 25°C	Power - Max [Max]	IGBT Type
Infineon Technologies IGW50N65H5AXKSA1	TO-247-3	160 µJ 450 µJ	80 A	AEC-Q101	650 V	12 Ohm 15 V 25 A 400 V	2.1 V	Through Hole	150 A	116 nC	-40 C	175 °C	Automotive	PG-TO247-3	21 ns 173 ns	270 W	Trench

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	240	$ 4.18

General part information

IGBT Trench 650 V 80 A 270 W Through Hole PG-TO247-3

Technical documentation and resources