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IPD40N03S4L08ATMA1 - Infineon Technologies AG-IPD40N03S4L08ATMA1 MOSFETs Trans MOSFET N-CH 30V 40A 3-Pin(2+Tab) DPAK T/R Automotive AEC-Q101

IPD40N03S4L08ATMA1

Unknown
Infineon Technologies

TRANS MOSFET N-CH 30V 40A 3-PIN(2+TAB) DPAK T/R AUTOMOTIVE AEC-Q101

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IPD40N03S4L08ATMA1 - Infineon Technologies AG-IPD40N03S4L08ATMA1 MOSFETs Trans MOSFET N-CH 30V 40A 3-Pin(2+Tab) DPAK T/R Automotive AEC-Q101

IPD40N03S4L08ATMA1

Unknown
Infineon Technologies

TRANS MOSFET N-CH 30V 40A 3-PIN(2+TAB) DPAK T/R AUTOMOTIVE AEC-Q101

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationIPD40N03S4L08ATMA1
Drain to Source Voltage (Vdss)30 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [x]20 nC
GradeAutomotive
Input Capacitance (Ciss) (Max) @ Vds1520 pF
Mounting TypeSurface Mount
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-55 °C
Package / CaseSC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)42 W
QualificationAEC-Q101
Rds On (Max) @ Id, Vgs8.3 mOhm
Supplier Device PackagePG-TO252-3-11
TechnologyMOSFET (Metal Oxide)
Vgs (Max)16 V
Vgs(th) (Max) @ Id2.2 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

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Description

General part information

IPD40N03 Series

N-Channel 30 V 40A (Tc) 42W (Tc) Surface Mount PG-TO252-3-11

Documents

Technical documentation and resources