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BSC0805LSATMA1 - BSC0805LSATMA1

BSC0805LSATMA1

Obsolete
Infineon Technologies

OPTIMOS™ PD N-CHANNEL POWER MOSFET 100 V ; SUPERSO8 PACKAGE; 7 MOHM;

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BSC0805LSATMA1 - BSC0805LSATMA1

BSC0805LSATMA1

Obsolete
Infineon Technologies

OPTIMOS™ PD N-CHANNEL POWER MOSFET 100 V ; SUPERSO8 PACKAGE; 7 MOHM;

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationBSC0805LSATMA1
Current - Continuous Drain (Id) @ 25°C79 A
Drain to Source Voltage (Vdss)100 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]20 nC
Input Capacitance (Ciss) (Max) @ Vds2700 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case8-PowerTDFN
Power Dissipation (Max)83 W
Rds On (Max) @ Id, Vgs7 mOhm
Supplier Device PackagePG-TDSON-8-6
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id2.3 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$

Description

General part information

BSC0805 Series

OptiMOS™ PD power MOSFETis Infineon’s portfolio targeting USB-PD and adapter applications. The products offer fast ramp-up and optimized lead times. OptiMOS™ low-voltage MOSFETs for power delivery enable designs with less parts leading to BOM cost reduction. OptiMOS™ PD features quality products in compact, lightweight packages. Click here to viewfull portfolio.

Documents

Technical documentation and resources