IXFH18N60X

Obsolete

IXYS

MOSFET N-CH 600V 18A TO247

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Obsolete

IXYS

MOSFET N-CH 600V 18A TO247

Technical Specifications

Parameters and characteristics for this part

Specification	IXFH18N60X

Current - Continuous Drain (Id) @ 25°C	18 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	35 nC
Input Capacitance (Ciss) (Max) @ Vds	1440 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power Dissipation (Max) [Max]	320 W
Rds On (Max) @ Id, Vgs	230 mOhm
Supplier Device Package	TO-247 (IXTH)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4.5 V

Part	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs [Max]	Technology	Mounting Type	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max) [Max]	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Package / Case
IXYS IXFH18N60X	600 V	230 mOhm	4.5 V	35 nC	MOSFET (Metal Oxide)	Through Hole	N-Channel	-55 °C	150 °C	30 V	10 V	320 W	1440 pF	18 A	TO-247 (IXTH)	TO-247-3

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 600 V 18A (Tc) 320W (Tc) Through Hole TO-247 (IXTH)

Technical documentation and resources

No documents available