Technical Specifications
Parameters and characteristics for this part
| Specification | ST13009 |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 12 A |
| DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | 10 |
| Mounting Type | Through Hole |
| Operating Temperature | 150 °C |
| Package / Case | TO-220-3 |
| Power - Max [Max] | 100 W |
| Supplier Device Package | TO-220 |
| Transistor Type | NPN |
| Vce Saturation (Max) @ Ib, Ic | 2.5 V |
| Voltage - Collector Emitter Breakdown (Max) | 400 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tube | 1 | $ 1.73 | |
| 50 | $ 1.39 | |||
| 100 | $ 1.14 | |||
| 500 | $ 0.97 | |||
| 1000 | $ 0.82 | |||
| 2000 | $ 0.78 | |||
| 5000 | $ 0.75 | |||
| 10000 | $ 0.73 | |||
Description
General part information
ST13009 Series
The device is manufactured using high voltage multi-epitaxial planar technology for high switching speeds and high voltage capability. It uses a hollow emitter structure to enhance switching speeds.
Documents
Technical documentation and resources