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IXFN27N80

IXFN27N80

NRND
LITTELFUSE

DISCMSFT NCH HIPERFETS-STD SOT-227B(MINI

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IXFN27N80

IXFN27N80

NRND
LITTELFUSE

DISCMSFT NCH HIPERFETS-STD SOT-227B(MINI

Find alt

Description

General part information

IXFN27 Series

The Q-Class series devices are popular Power MOSFETs (HiPerFET™) for both hard switching and resonant mode applications, offering low gate charge and excellent ruggedness with a fast intrinsic diode. They are available in many standard industrial packages including isolated types. Advantages: Easy assembly High Power density Space savings

Technical Specifications

Parameters and characteristics for this part

SpecificationIXFN27N80
Current - Continuous Drain (Id) (Tc)27 A
Drain to Source Voltage (Vdss)800 V
Drive Voltage (Max Rds On)10 V
Drive Voltage (Min Rds On)15 V
FET TypeN-Channel
Gate Charge (Max)400 nC
Input Capacitance (Ciss) (Max)9740 pF
Mounting TypeChassis Mount
Operating Temperature (Max)150 °C
Operating Temperature (Min)-55 °C
Package / CaseSOT-227-4, miniBLOC
Package NameSOT-227B
Power Dissipation (Max)520 W
Rds On (Max)300 mOhm, 300 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max)4.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

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CAD

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