2SB1457(T6CNO,A,F)

Obsolete

Toshiba Semiconductor and Storage

TRANS PNP 100V 2A TO92MOD

Search across all available documentation for this part.

Obsolete

Toshiba Semiconductor and Storage

TRANS PNP 100V 2A TO92MOD

Technical Specifications

Parameters and characteristics for this part

Specification	2SB1457(T6CNO,A,F)

Current - Collector (Ic) (Max) [Max]	2 A
Current - Collector Cutoff (Max) [Max]	10 µA
DC Current Gain (hFE) (Min) @ Ic, Vce	2000 hFE
Frequency - Transition	50 MHz
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-92-3 Long Body, TO-226-3
Power - Max [Max]	900 mW
Supplier Device Package	TO-92MOD
Transistor Type	PNP
Voltage - Collector Emitter Breakdown (Max) [Max]	100 V

Part	Voltage - Collector Emitter Breakdown (Max) [Max]	Power - Max [Max]	Current - Collector (Ic) (Max) [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce	Frequency - Transition	Current - Collector Cutoff (Max) [Max]	Operating Temperature	Package / Case	Supplier Device Package	Transistor Type	Mounting Type
Toshiba Semiconductor and Storage 2SB1457(T6DW,F,M)	100 V	900 mW	2 A	2000 hFE	50 MHz	10 µA	150 °C	TO-226-3 TO-92-3 Long Body	TO-92MOD	PNP	Through Hole
Toshiba Semiconductor and Storage 2SB1457(T6CANO,F,M	100 V	900 mW	2 A	2000 hFE	50 MHz	10 µA	150 °C	TO-226-3 TO-92-3 Long Body	TO-92MOD	PNP	Through Hole
Toshiba Semiconductor and Storage 2SB1457(T6CNO,A,F)	100 V	900 mW	2 A	2000 hFE	50 MHz	10 µA	150 °C	TO-226-3 TO-92-3 Long Body	TO-92MOD	PNP	Through Hole

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Bipolar (BJT) Transistor PNP 100 V 2 A 50MHz 900 mW Through Hole TO-92MOD

Technical documentation and resources