TK14A55D(STA4,Q,M)

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Toshiba Semiconductor and Storage

MOSFET N-CH 550V 14A TO220SIS

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Toshiba Semiconductor and Storage

MOSFET N-CH 550V 14A TO220SIS

Technical Specifications

Parameters and characteristics for this part

Specification	TK14A55D(STA4,Q,M)

Current - Continuous Drain (Id) @ 25°C	14 A
Drain to Source Voltage (Vdss)	550 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	40 nC
Input Capacitance (Ciss) (Max) @ Vds	2300 pF
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-220-3 Full Pack
Power Dissipation (Max) [Max]	50 W
Rds On (Max) @ Id, Vgs	370 mOhm
Supplier Device Package	TO-220SIS
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V

Part	Power Dissipation (Max) [Max]	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature	Technology	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs (Max)	FET Type	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Mounting Type
Toshiba Semiconductor and Storage TK14A55D(STA4,Q,M)	50 W	TO-220-3 Full Pack	10 V	150 °C	MOSFET (Metal Oxide)	TO-220SIS	2300 pF	40 nC	30 V	N-Channel	550 V	14 A	370 mOhm	Through Hole

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General part information

N-Channel 550 V 14A (Ta) 50W (Tc) Through Hole TO-220SIS

Technical documentation and resources