STO67N60DM6
ObsoleteN-CHANNEL 600 V, 48 MOHM TYP., 58 A MDMESH DM6 POWER MOSFET IN A TO-LL PACKAGE
STO67N60DM6
ObsoleteN-CHANNEL 600 V, 48 MOHM TYP., 58 A MDMESH DM6 POWER MOSFET IN A TO-LL PACKAGE
Description
General part information
STO67 Series
This high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fast-recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on)per area with one of the most effective switching behaviors available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.
Technical Specifications
Parameters and characteristics for this part
| Specification | STO67N60DM6 |
|---|---|
| Current - Continuous Drain (Id) (Tc) | 33 A |
| Drain to Source Voltage (Vdss) | 600 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 72.5 nC |
| Input Capacitance (Ciss) (Max) | 3400 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | 8-PowerSFN |
| Package Name | TOLL (HV) |
| Power Dissipation (Max) | 150 W |
| Rds On (Max) | 59 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 25 V |
| Vgs(th) (Max) | 4.75 V |
Pricing
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