STO67N60DM6
ActiveN-CHANNEL 600 V, 48 MOHM TYP., 58 A MDMESH DM6 POWER MOSFET IN A TO-LL PACKAGE
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STO67N60DM6
ActiveN-CHANNEL 600 V, 48 MOHM TYP., 58 A MDMESH DM6 POWER MOSFET IN A TO-LL PACKAGE
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Technical Specifications
Parameters and characteristics for this part
| Specification | STO67N60DM6 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 33 A |
| Drain to Source Voltage (Vdss) | 600 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 72.5 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 3400 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 8-PowerSFN |
| Power Dissipation (Max) | 150 W |
| Rds On (Max) @ Id, Vgs | 59 mOhm |
| Supplier Device Package | TOLL (HV) |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 25 V |
| Vgs(th) (Max) @ Id | 4.75 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
STO67N60DM6 Series
This high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fast-recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on)per area with one of the most effective switching behaviors available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.
Documents
Technical documentation and resources