Specification	VS-40MT120UHTAPBF

Configuration	Half Bridge
Current - Collector (Ic) (Max)	80 A
Current - Collector Cutoff (Max)	250 µA
IGBT Type	NPT
Input	Standard
Input Capacitance (Cies) @ Vce	8.28 nF
Mounting Type	Chassis Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-40 °C
Package / Case	12-MTP Module
Package Name	MTP
Power - Max	463 W
Vce(on) (Max)	4.91 V
Voltage - Collector Emitter Breakdown (Max)	1200 V

40MT120 Series

Part	Current - Collector (Ic) (Max)	Vce(on) (Max)	Mounting Type	Package Name	Input Capacitance (Cies) @ Vce	Voltage - Collector Emitter Breakdown (Max)	IGBT Type	Input	Configuration	Current - Collector Cutoff (Max)	Power - Max	Operating Temperature (Min)	Operating Temperature (Max)	Package / Case
Vishay General Semiconductor - Diodes Division VS-40MT120UHAPBF	80 A	4.91 V	Chassis Mount	MTP	8.28 nF	1200 V	NPT	Standard	Half Bridge	250 µA	463 W	-40 °C	150 °C	12-MTP Module
Vishay General Semiconductor - Diodes Division VS-40MT120UHTAPBF	80 A	4.91 V	Chassis Mount	MTP	8.28 nF	1200 V	NPT	Standard	Half Bridge	250 µA	463 W	-40 °C	150 °C	12-MTP Module

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