IR4426S

Obsolete

Infineon Technologies

EICEDRIVER™ 25 V LOW-SIDE DRIVER IC WITH TYPICAL 2.3 A SOURCE AND 3.3 A SINK OUTPUT CURRENTS. IT COMES WITH A NON-ISOLATED SOIC 8N PACKAGE AND WORKS WITH IGBTS AND MOSFETS.

Deep-Dive with AI

Search across all available documentation for this part.

DocumentsDatasheet

IR4426S

Obsolete

Infineon Technologies

EICEDRIVER™ 25 V LOW-SIDE DRIVER IC WITH TYPICAL 2.3 A SOURCE AND 3.3 A SINK OUTPUT CURRENTS. IT COMES WITH A NON-ISOLATED SOIC 8N PACKAGE AND WORKS WITH IGBTS AND MOSFETS.

Deep-Dive with AI

DocumentsDatasheet

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IR4426S

Channel Type	Independent
Current - Peak Output (Source, Sink) [custom]	3.3 A
Current - Peak Output (Source, Sink) [custom]	2.3 A
Driven Configuration	Low-Side
Gate Type	N-Channel MOSFET, IGBT
Input Type	Inverting
Logic Voltage - VIL, VIH	2.7 V, 0.8 V
Mounting Type	Surface Mount
Number of Drivers	2
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-40 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Rise / Fall Time (Typ) [custom]	15 ns
Rise / Fall Time (Typ) [custom]	10 ns
Supplier Device Package	8-SOIC
Voltage - Supply [Max]	20 V
Voltage - Supply [Min]	6 V

IR4426 Series

Part	Package / Case	Package / Case	Package / Case	Current - Peak Output (Source, Sink) [custom]	Current - Peak Output (Source, Sink) [custom]	Voltage - Supply [Min]	Voltage - Supply [Max]	Driven Configuration	Input Type	Operating Temperature [Max]	Operating Temperature [Min]	Number of Drivers	Mounting Type	Logic Voltage - VIL, VIH	Gate Type	Rise / Fall Time (Typ) [custom]	Rise / Fall Time (Typ) [custom]	Channel Type	Supplier Device Package	Package / Case [y]	Package / Case [x]
Infineon Technologies IR4426PBF	0.3 in	8-DIP	7.62 mm	3.3 A	2.3 A	6 V	20 V	Low-Side	Inverting	150 °C	-40 °C	2	Through Hole	0.8 V 2.7 V	IGBT N-Channel MOSFET	15 ns	10 ns	Independent	8-PDIP
Infineon Technologies IR4426S		8-SOIC		3.3 A	2.3 A	6 V	20 V	Low-Side	Inverting	150 °C	-40 °C	2	Surface Mount	0.8 V 2.7 V	IGBT N-Channel MOSFET	15 ns	10 ns	Independent	8-SOIC	3.9 mm	0.154 in
Infineon Technologies IR4426SPBF		8-SOIC		3.3 A	2.3 A	6 V	20 V	Low-Side	Inverting	150 °C	-40 °C	2	Surface Mount	0.8 V 2.7 V	IGBT N-Channel MOSFET	15 ns	10 ns	Independent	8-SOIC	3.9 mm	0.154 in
Infineon Technologies IR4426PBF	0.3 in	8-DIP	7.62 mm	3.3 A	2.3 A	6 V	20 V	Low-Side	Inverting	150 °C	-40 °C	2	Through Hole	0.8 V 2.7 V	IGBT N-Channel MOSFET	15 ns	10 ns	Independent	8-PDIP
Infineon Technologies IR4426SPPBF		8-SOIC		3.3 A	2.3 A	6 V	20 V	Low-Side	Non-Inverting	125 °C	-40 °C	2	Surface Mount	0.8 V 2.7 V	IGBT MOSFET	15 ns	10 ns	Independent	8-SOIC	3.9 mm	0.154 in
Infineon Technologies IR4426	0.3 in	8-DIP	7.62 mm	3.3 A	2.3 A	6 V	20 V	Low-Side	Inverting	150 °C	-40 °C	2	Through Hole	0.8 V 2.7 V	IGBT N-Channel MOSFET	15 ns	10 ns	Independent	8-PDIP
Infineon Technologies IR4426STRPBF		8-SOIC		3.3 A	2.3 A	6 V	20 V	Low-Side	Inverting	150 °C	-40 °C	2	Surface Mount	0.8 V 2.7 V	IGBT N-Channel MOSFET	15 ns	10 ns	Independent	8-SOIC	3.9 mm	0.154 in

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

IR4426 Series

EiceDRIVER™ 25 V dual-channel low-sidegate driverIC with typical 2.3 A source and 3.3 A sink currents in 8-lead SOIC and PDIP package forMOSFETsandIGBTs. The proprietary latch immune CMOS technologies enable ruggedized mono-lithic construction. The logic inputs are compatible with standard CMOS or LSTTL output. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. Propagation delays are matched to simplify use in high frequency applications.

Documents

Technical documentation and resources