IDH05S60CAKSA1

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Infineon Technologies

DIODE SIL CARB 600V 5A PGTO2202

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Unknown

Infineon Technologies

DIODE SIL CARB 600V 5A PGTO2202

Technical Specifications

Parameters and characteristics for this part

Specification	IDH05S60CAKSA1

Capacitance @ Vr, F	240 pF
Current - Average Rectified (Io)	5 A
Current - Reverse Leakage @ Vr	70 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 C
Package / Case	TO-220-2
Reverse Recovery Time (trr)	0 ns
Speed	No Recovery Time
Supplier Device Package	PG-TO220-2-2
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	600 V
Voltage - Forward (Vf) (Max) @ If	1.7 V

Part	Current - Reverse Leakage @ Vr	Current - Average Rectified (Io)	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Reverse Recovery Time (trr)	Supplier Device Package	Technology	Package / Case	Capacitance @ Vr, F	Voltage - DC Reverse (Vr) (Max) [Max]	Speed	Voltage - Forward (Vf) (Max) @ If	Mounting Type
Infineon Technologies IDH05S120AKSA1	120 µA	5 A	175 ░C	-55 C	0 ns	PG-TO220-2-2	SiC (Silicon Carbide) Schottky	TO-220-2	250 pF	1.2 kV	No Recovery Time	1.8 V	Through Hole
Infineon Technologies IDH05S60CAKSA1	70 µA	5 A	175 ░C	-55 C	0 ns	PG-TO220-2-2	SiC (Silicon Carbide) Schottky	TO-220-2	240 pF	600 V	No Recovery Time	1.7 V	Through Hole

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Diode 600 V 5A Through Hole PG-TO220-2-2

Technical documentation and resources

No documents available