
BSZ037N06LS5ATMA1
ActiveOPTIMOS™ 5 N-CHANNEL POWER MOSFET 60 V ; PQFN 3.3 X 3.3 FUSED LEAD PACKAGE; 3.7 MOHM;
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BSZ037N06LS5ATMA1
ActiveOPTIMOS™ 5 N-CHANNEL POWER MOSFET 60 V ; PQFN 3.3 X 3.3 FUSED LEAD PACKAGE; 3.7 MOHM;
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Technical Specifications
Parameters and characteristics for this part
| Specification | BSZ037N06LS5ATMA1 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 18 A, 40 A |
| Drain to Source Voltage (Vdss) | 60 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V, 4.5 V |
| FET Type | N-Channel |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 3100 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 8-PowerVDFN |
| Power Dissipation (Max) | 69 W, 2.1 W |
| Rds On (Max) @ Id, Vgs | 3.7 mOhm |
| Supplier Device Package | PG-TSDSON-8-34 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 2.3 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
BSZ037 Series
OptiMOS™ 5 60V power MOSFET BSZ037N06LS5 comprises a perfect fit for optimized efficiency and power density solutions such as synchronous rectification in switched mode power supplies (SMPS), for telecom bricks and server applications, as well as portable chargers. The small footprint of only 3.3x3.3mm2 combined with outstanding electrical performance further contributes towards best-in-class power density and form factor improvement in the end application.
Documents
Technical documentation and resources