
SUP40N25-60-E3
ActiveVishay General Semiconductor - Diodes Division
MOSFET N-CH 250V 40A TO220AB
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SUP40N25-60-E3
ActiveVishay General Semiconductor - Diodes Division
MOSFET N-CH 250V 40A TO220AB
Deep-Dive with AI
DocumentsDatasheet
Technical Specifications
Parameters and characteristics for this part
| Specification | SUP40N25-60-E3 |
|---|---|
| Drain to Source Voltage (Vdss) | 250 V |
| Drive Voltage (Max Rds On, Min Rds On) | 6 V, 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 140 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 5000 pF |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 175 ░C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-220-3 |
| Power Dissipation (Max) | 3.75 W, 300 W |
| Rds On (Max) @ Id, Vgs | 60 mOhm |
| Supplier Device Package | TO-220AB |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 30 V |
| Vgs(th) (Max) @ Id | 4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tube | 1 | $ 4.84 | |
| 50 | $ 3.84 | |||
| 100 | $ 3.29 | |||
| 500 | $ 2.92 | |||
| 1000 | $ 2.50 | |||
| 2000 | $ 2.36 | |||
Description
General part information
SUP40 Series
N-Channel 250 V 40A (Tc) 3.75W (Ta), 300W (Tc) Through Hole TO-220AB
Documents
Technical documentation and resources