
SUP40P10-43-GE3
ObsoleteVishay General Semiconductor - Diodes Division
MOSFET P-CH 100V 36A TO220AB
Deep-Dive with AI
Search across all available documentation for this part.
DocumentsDatasheet

SUP40P10-43-GE3
ObsoleteVishay General Semiconductor - Diodes Division
MOSFET P-CH 100V 36A TO220AB
Deep-Dive with AI
DocumentsDatasheet
Technical Specifications
Parameters and characteristics for this part
| Specification | SUP40P10-43-GE3 | 
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 36 A | 
| Drain to Source Voltage (Vdss) | 100 V | 
| Drive Voltage (Max Rds On, Min Rds On) | 10 V, 4.5 V | 
| FET Type | P-Channel | 
| Gate Charge (Qg) (Max) @ Vgs [Max] | 160 nC | 
| Input Capacitance (Ciss) (Max) @ Vds | 4600 pF | 
| Mounting Type | Through Hole | 
| Operating Temperature [Max] | 150 °C | 
| Operating Temperature [Min] | -55 °C | 
| Package / Case | TO-220-3 | 
| Power Dissipation (Max) | 2 W, 125 W | 
| Rds On (Max) @ Id, Vgs | 43 mOhm | 
| Supplier Device Package | TO-220AB | 
| Technology | MOSFET (Metal Oxide) | 
| Vgs (Max) | 20 V | 
| Vgs(th) (Max) @ Id | 3 V | 
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
Description
General part information
SUP40 Series
P-Channel 100 V 36A (Tc) 2W (Ta), 125W (Tc) Through Hole TO-220AB
Documents
Technical documentation and resources