
FM25V02A-DGQ
ActiveFERROELECTRIC RAM (FRAM), 256 KBIT, 32K X 8BIT, SPI, 33 MHZ, 2.7 V TO 3.6 V SUPPLY, DFN-8
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FM25V02A-DGQ
ActiveFERROELECTRIC RAM (FRAM), 256 KBIT, 32K X 8BIT, SPI, 33 MHZ, 2.7 V TO 3.6 V SUPPLY, DFN-8
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Technical Specifications
Parameters and characteristics for this part
| Specification | FM25V02A-DGQ |
|---|---|
| Clock Frequency | 40 MHz |
| Memory Format | FRAM |
| Memory Interface | SPI |
| Memory Organization | 32K x 8 |
| Memory Size | 32 KB |
| Memory Type | Non-Volatile |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 85 °C |
| Operating Temperature [Min] | -40 °C |
| Package / Case | 8-WDFN Exposed Pad |
| Supplier Device Package | 8-DFN (4x4.5) |
| Technology | FRAM (Ferroelectric RAM) |
| Voltage - Supply [Max] | 3.6 V |
| Voltage - Supply [Min] | 2 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
FM25V02 Series
FM25V02A-DGQ is a 256-Kbit (32K × 8) serial (SPI) F-RAM with extended temperature. It is a 256-Kbit non-volatile memory employing an advanced ferroelectric process. An F-RAM is non-volatile and performs reads and writes similar to a RAM. It provides reliable data retention for 121 years while eliminating the complexities, overhead, and system-level reliability problems caused by serial flash, EEPROM, and other non-volatile memories. The FM25V02A is capable of supporting 10^14 read/write cycles, or 100 million times more write cycles than EEPROM. These capabilities make the FM25V02A ideal for non-volatile memory applications requiring frequent or rapid writes. Examples range from data logging, where the number of write cycles may be critical, to demanding industrial controls where the long write time of serial flash or EEPROM can cause data loss. The FM25V02A provides substantial benefits to users of serial EEPROM or flash as a hardware drop-in replacement.
Documents
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