DSR01S30SC,L3F

Obsolete

Toshiba Semiconductor and Storage

DIODE SCHOTTKY 30V 100MA SC2

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Obsolete

Toshiba Semiconductor and Storage

DIODE SCHOTTKY 30V 100MA SC2

Technical Specifications

Parameters and characteristics for this part

Specification	DSR01S30SC,L3F

Capacitance @ Vr, F	8.2 pF
Current - Average Rectified (Io)	100 mA
Current - Reverse Leakage @ Vr	700 µA
Mounting Type	Surface Mount
Operating Temperature - Junction	125 °C
Package / Case	0603 Metric
Package / Case	0201
Speed	Any Speed
Speed	200 mA
Supplier Device Package	SC2
Technology	Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	30 V
Voltage - Forward (Vf) (Max) @ If	620 mV

Part	Voltage - DC Reverse (Vr) (Max) [Max]	Package / Case	Speed	Speed	Operating Temperature - Junction	Mounting Type	Capacitance @ Vr, F	Voltage - Forward (Vf) (Max) @ If	Current - Reverse Leakage @ Vr	Technology	Current - Average Rectified (Io)	Supplier Device Package	Package / Case
Toshiba Semiconductor and Storage DSR01S30SL,L3F	30 V	2-SMD No Lead	Any Speed	200 mA	125 °C	Surface Mount	8.2 pF	620 mV	700 nA	Schottky	100 mA	SL2
Toshiba Semiconductor and Storage DSR01S30SC,L3F	30 V	0201	Any Speed	200 mA	125 °C	Surface Mount	8.2 pF	620 mV	700 µA	Schottky	100 mA	SC2	0603 Metric

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Diode 30 V 100mA Surface Mount SC2

Technical documentation and resources