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Description

General part information

2N5011S-Transistor Series

This specification covers the performance requirements for NPN, silicon, 2N5010 through 2N5015 transistors. Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each encapsulated device type as specified in MIL-PRF-19500/727.

Technical Specifications

Parameters and characteristics for this part

Specification2N5011S
Current - Collector (Ic) (Max)0.2 mA
Current - Collector Cutoff (Max)0.01 µA
DC Current Gain (hFE) (Min)30
Mounting TypeThrough Hole
Operating Temperature (Max)200 °C
Operating Temperature (Min)-65 °C
Package / CaseTO-39-3 Metal Can, TO-205AD
Package NameTO-39 (TO-205AD)
Power - Max1 VA
Transistor TypeNPN
Vce Saturation (Max)1.5 V
Voltage - Collector Emitter Breakdown (Max)600 V

Pricing

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CAD

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