DXT751-13

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Diodes Inc

TRANS GP BJT PNP 60V 3A 4-PIN(3+TAB) SOT-89 T/R

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Diodes Inc

TRANS GP BJT PNP 60V 3A 4-PIN(3+TAB) SOT-89 T/R

Technical Specifications

Parameters and characteristics for this part

Specification	DXT751-13

Current - Collector (Ic) (Max) [Max]	3 A
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	100
Frequency - Transition	145 MHz
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-243AA
Power - Max [Max]	1 W
Supplier Device Package	SOT-89-3
Transistor Type	PNP
Vce Saturation (Max) @ Ib, Ic	600 mV
Voltage - Collector Emitter Breakdown (Max)	60 V

PNP, 60V, 3A, SOT89

Part	Supplier Device Package	Voltage - Collector Emitter Breakdown (Max)	Current - Collector (Ic) (Max) [Max]	Current - Collector Cutoff (Max) [Max]	Vce Saturation (Max) @ Ib, Ic	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Transistor Type	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Package / Case	Frequency - Transition	Power - Max [Max]	Qualification	Grade
Diodes Inc DXT751-13	SOT-89-3	60 V	3 A	100 nA	600 mV	Surface Mount	-55 °C	150 °C	PNP	100	TO-243AA	145 MHz	1 W
Diodes Inc DXT751Q-13	SOT-89-3	60 V	3 A	100 nA	600 mV	Surface Mount	-55 °C	150 °C	PNP	100	TO-243AA	100 MHz	1 W	AEC-Q101	Automotive

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

This Bipolar Junction Transistor (BJT) is designed to meet the stringent requirements of automotive applications.

Technical documentation and resources