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BSC0909NSATMA1 - INFINEON IPG20N10S4L35AATMA1

BSC0909NSATMA1

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Infineon Technologies

OPTIMOS™ N-CHANNEL POWER MOSFET 30 V ; SUPERSO8 5X6 PACKAGE; 11.8 MOHM;

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BSC0909NSATMA1 - INFINEON IPG20N10S4L35AATMA1

BSC0909NSATMA1

Active
Infineon Technologies

OPTIMOS™ N-CHANNEL POWER MOSFET 30 V ; SUPERSO8 5X6 PACKAGE; 11.8 MOHM;

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationBSC0909NSATMA1
Current - Continuous Drain (Id) @ 25°C12 A, 44 A
Drain to Source Voltage (Vdss)34 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeN-Channel
Input Capacitance (Ciss) (Max) @ Vds1110 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case8-PowerTDFN
Power Dissipation (Max)27 W, 2.5 W
Rds On (Max) @ Id, Vgs9.2 mOhm
Supplier Device PackagePG-TDSON-8-5
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id2 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
ArrowN/A 5000$ 0.20
DigikeyCut Tape (CT) 1$ 0.97
10$ 0.60
100$ 0.39
500$ 0.30
1000$ 0.27
2000$ 0.25
Digi-Reel® 1$ 0.97
10$ 0.60
100$ 0.39
500$ 0.30
1000$ 0.27
2000$ 0.25
Tape & Reel (TR) 5000$ 0.22
10000$ 0.21
15000$ 0.20
25000$ 0.20
NewarkEach (Supplied on Cut Tape) 1$ 0.99
10$ 0.65
25$ 0.58
50$ 0.52
100$ 0.45
250$ 0.41
500$ 0.37
1000$ 0.34

Description

General part information

BSC0909 Series

Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications. OptiMOS™ 30V products are tailored to the needs of power management in notebook by improved EMI behavior, as well as increased battery life. Available in halfbridge configuration (power stage 5x6)