CMS55N06CT-HF

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Comchip Technology

MOSFET N-CH 60V 55A TO220AB

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Comchip Technology

MOSFET N-CH 60V 55A TO220AB

Technical Specifications

Parameters and characteristics for this part

Specification	CMS55N06CT-HF

Current - Continuous Drain (Id) @ 25°C	55 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	39.2 nC
Input Capacitance (Ciss) (Max) @ Vds	2100 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max)	2 W, 96 W
Rds On (Max) @ Id, Vgs [Max]	12 mOhm
Supplier Device Package	TO-220AB
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

MOSFET N-CH 60V 55A TO220AB

Part	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs [Max]	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs	Supplier Device Package	Package / Case	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Technology	Mounting Type	Vgs (Max)	FET Type	Operating Temperature [Min]	Operating Temperature [Max]
Comchip Technology CMS55N06CT-HF	4.5 V, 10 V	2100 pF	2.5 V	12 mOhm	55 A	39.2 nC	TO-220AB	TO-220-3	2 W, 96 W	60 V	MOSFET (Metal Oxide)	Through Hole	20 V	N-Channel	-55 °C	150 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 60 V 55A (Tc) 2W (Ta), 96W (Tc) Through Hole TO-220AB

Technical documentation and resources

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