IPP80R900P7XKSA1

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Infineon Technologies

TRANS MOSFET N-CH 800V 6A 3-PIN(3+TAB) TO-220 TUBE

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Infineon Technologies

TRANS MOSFET N-CH 800V 6A 3-PIN(3+TAB) TO-220 TUBE

Technical Specifications

Parameters and characteristics for this part

Specification	IPP80R900P7XKSA1

Current - Continuous Drain (Id) @ 25°C	6 A
Drain to Source Voltage (Vdss)	800 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds [Max]	350 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max)	45 W
Rds On (Max) @ Id, Vgs	900 mOhm
Supplier Device Package	PG-TO220-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.5 V

Part	Rds On (Max) @ Id, Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Mounting Type	Package / Case	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Technology	FET Type	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Supplier Device Package	Vgs(th) (Max) @ Id
Infineon Technologies IPP80R900P7XKSA1	900 mOhm	-55 °C	150 °C	800 V	Through Hole	TO-220-3	20 V	10 V	6 A	MOSFET (Metal Oxide)	N-Channel	45 W	350 pF	PG-TO220-3	3.5 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 800 V 6A (Tc) 45W (Tc) Through Hole PG-TO220-3

Technical documentation and resources