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IXFN100N10S3 - IXYK1x0xNxxxx

IXFN100N10S3

Obsolete
IXYS

MOSFET N-CH 100V 100A SOT-227B

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IXFN100N10S3 - IXYK1x0xNxxxx

IXFN100N10S3

Obsolete
IXYS

MOSFET N-CH 100V 100A SOT-227B

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationIXFN100N10S3
Current - Continuous Drain (Id) @ 25°C100 A
Drain to Source Voltage (Vdss)100 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs180 nC
Input Capacitance (Ciss) (Max) @ Vds4500 pF
Mounting TypeChassis Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-40 °C
Package / CaseSOT-227-4, miniBLOC
Power Dissipation (Max)360 W
Rds On (Max) @ Id, Vgs [Max]15 mOhm
Supplier Device PackageSOT-227B
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id [Max]4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$

Description

General part information

IXFN100 Series

N-Channel 100 V 100A (Tc) 360W (Tc) Chassis Mount SOT-227B

Documents

Technical documentation and resources

No documents available