TP0610K-T1-E3

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Vishay Siliconix

MOSFET P-CH 60V 185MA SOT23-3

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Vishay Siliconix

MOSFET P-CH 60V 185MA SOT23-3

Technical Specifications

Parameters and characteristics commom to parts in this series

Specification	TP0610K-T1-E3	TP0610 Series

Current - Continuous Drain (Id) @ 25°C	185 mA	185 mA
Drain to Source Voltage (Vdss)	60 V	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V	4.5 - 10 V
FET Type	P-Channel	P-Channel
Gate Charge (Qg) (Max) @ Vgs	1.7 nC	1.7 nC
Input Capacitance (Ciss) (Max) @ Vds	23 pF	23 pF
Mounting Type	Surface Mount	Surface Mount
Operating Temperature [Max]	150 °C	150 °C
Operating Temperature [Min]	-55 °C	-55 °C
Package / Case	SOT-23-3, TO-236-3, SC-59	SOT-23-3, TO-236-3, SC-59
Power Dissipation (Max) [Max]	350 mW	350 mW
Rds On (Max) @ Id, Vgs	6 Ohm	6 Ohm
Supplier Device Package	SOT-23-3 (TO-236)	SOT-23-3 (TO-236)
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)
Vgs (Max)	20 V	20 V
Vgs(th) (Max) @ Id	3 V	3 V

MOSFET P-CH 60V 185MA SOT23-3

Part	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Gate Charge (Qg) (Max) @ Vgs	Power Dissipation (Max) [Max]	Technology	Supplier Device Package	Rds On (Max) @ Id, Vgs	Mounting Type	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Operating Temperature [Min]	Operating Temperature [Max]
Vishay Siliconix TP0610K-T1-E3	23 pF	P-Channel	1.7 nC	350 mW	MOSFET (Metal Oxide)	SOT-23-3 (TO-236)	6 Ohm	Surface Mount	3 V	60 V	SC-59, SOT-23-3, TO-236-3	4.5 V, 10 V	185 mA	20 V	-55 °C	150 °C
Vishay Siliconix TP0610K-T1	23 pF	P-Channel	1.7 nC	350 mW	MOSFET (Metal Oxide)	SOT-23-3 (TO-236)	6 Ohm	Surface Mount	3 V	60 V	SC-59, SOT-23-3, TO-236-3	4.5 V, 10 V	185 mA	20 V	-55 °C	150 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

P-Channel 60 V 185mA (Ta) 350mW (Ta) Surface Mount SOT-23-3 (TO-236)

Technical documentation and resources